Global Silicon Carbide(SiC) Power Devices Market Insights and Forecast to 2028

A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
Market Analysis and Insights: Global Silicon Carbide(SiC) Power Devices Market
Due to the COVID-19 pandemic, the global Silicon Carbide(SiC) Power Devices market size is estimated to be worth US$ million in 2022 and is forecast to a readjusted size of US$ million by 2028 with a CAGR of % during the review period. Fully considering the economic change by this health crisis, Diodes accounting for % of the Silicon Carbide(SiC) Power Devices global market in 2021, is projected to value US$ million by 2028, growing at a revised % CAGR in the post-COVID-19 period. While EV/HEVs segment is altered to an % CAGR throughout this forecast period.
The UPS & PS application segment accounted for the largest silicon carbide power devices market share during 2017. The utilization of SiC power devices in UPS & PS applications will increase in the coming years and the segment will account for the major share of this market till 2023.
In terms of production side, this report researches the Silicon Carbide(SiC) Power Devices capacity, production, growth rate, market share by manufacturers and by region (region level and country level), from 2017 to 2022, and forecast to 2028.
In terms of sales side, this report focuses on the sales of Silicon Carbide(SiC) Power Devices by region (region level and country level), by company, by Type and by Application. from 2017 to 2022 and forecast to 2028.
Global Silicon Carbide(SiC) Power Devices Scope and Segment
Silicon Carbide(SiC) Power Devices market is segmented by Type and by Application. Players, stakeholders, and other participants in the global Silicon Carbide(SiC) Power Devices market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
Diodes
Modules
Transistors
Other
Segment by Application
EV/HEVs
PV Inverters
UPS & PS
Other
By Company
Infineon Technologies
Cree
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
Toshiba
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE