Global NAND Flash Memory and DRAM Sales Market Report 2021
SKU ID : QYR-17409221 | Publishing Date : 16-Feb-2021 | No. of pages : 137
Dynamic random-access memory is a type of random access semiconductor memory that stores each bit of data in a memory cell consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor technology.
The industry's leading producers are Samsung, Micron and SK Hynix, with revenues of 34.54%, 16.50% and 22.40% respectively in 2019.
Market Analysis and Insights: Global NAND Flash Memory and DRAM Market
The global NAND Flash Memory and DRAM market was valued at US$ 142220 in 2020 and will reach US$ 200600 million by the end of 2027, growing at a CAGR of 5.9% during 2022-2027.
Global NAND Flash Memory and DRAM Scope and Market Size
The global NAND Flash Memory and DRAM market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global NAND Flash Memory and DRAM market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2016-2027.
Segment by Type
NAND Flash Memory
DRAM
Segment by Application
Smartphone
PC
SSD
Digital TV
Others
The NAND Flash Memory and DRAM market is analysed and market size information is provided by regions (countries). Segment by Application, the NAND Flash Memory and DRAM market is segmented into North America, Europe, China, Japan, Southeast Asia, India and Other Regions.
By Company
Samsung
Micron
SK Hynix
Kioxia Holdings Corporation
Western Digital
Intel
Nanya
Winbond
Frequently Asked Questions
- By product type
- By End User/Applications
- By Technology
- By Region