Global and China Silicon Carbide(SiC) Power Devices Market Insights, Forecast to 2027

SKU ID : QYR-18771603 | Publishing Date : 21-Jul-2021 | No. of pages : 130

A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
The UPS & PS application segment accounted for the largest silicon carbide power devices market share during 2017. The utilization of SiC power devices in UPS & PS applications will increase in the coming years and the segment will account for the major share of this market till 2023.

Market Analysis and Insights: Global and China Silicon Carbide(SiC) Power Devices Market
This report focuses on global and China Silicon Carbide(SiC) Power Devices market.
In 2020, the global Silicon Carbide(SiC) Power Devices market size was US$ XX million and it is expected to reach US$ XX million by the end of 2027, with a CAGR of XX% during 2021-2027. In China the Silicon Carbide(SiC) Power Devices market size is expected to grow from US$ XX million in 2020 to US$ XX million by 2027, at a CAGR of XX% during the forecast period.

Global Silicon Carbide(SiC) Power Devices Scope and Market Size
Silicon Carbide(SiC) Power Devices market is segmented by region (country), players, by Type, and by Application. Players, stakeholders, and other participants in the global Silicon Carbide(SiC) Power Devices market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by region (country), by Type and by Application in terms of revenue and forecast for the period 2016-2027.
For China market, this report focuses on the Silicon Carbide(SiC) Power Devices market size by players, by Type, and by Application, for the period 2016-2027. The key players include the global and local players which play important roles in China.

Segment by Type
Diodes
Modules
Transistors
Other

Segment by Application
EV/HEVs
PV Inverters
UPS & PS
Other

By Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE

By Company
Infineon Technologies
Cree
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
Toshiba

Frequently Asked Questions

This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
  • By product type
  • By End User/Applications
  • By Technology
  • By Region
The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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