The global SiC and GaN Power Devices market was valued at million US$ in 2018 and will reach million US$ by the end of 2025, growing at a CAGR of during 2019-2025.
This report focuses on SiC and GaN Power Devices volume and value at global level, regional level and company level. From a global perspective, this report represents overall SiC and GaN Power Devices market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of SiC and GaN Power Devices in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their SiC and GaN Power Devices manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microsemi
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD
Transphorm

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
GaN Power Devices
SiC Power Devices

Segment by Application
Consumer Electronics
Automotive & Transportation
Industrial Use
Others